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2~18 GHz超宽带低噪声放大器芯片研制

Design of 2-18GHz Ultra-Wideband Low Noise Amplifier

  • 摘要: 低噪声放大器在射电天文望远镜接收机中是一个重要的前端组件,其性能对接收机的灵敏度和噪声有至关重要的影响。采用OMMIC公司70 nm GaAs mHEMT工艺研究和设计了一款工作频率为2~18 GHz的超宽带单片微波集成低噪声放大器芯片,芯片面积为2 mm×1 mm。放大器电路采用三级级联放大、双电源供电拓扑结构,常温在片测试结果显示,全频带增益大于28 dB,噪声温度平均值为93 K,直流功耗150 mW,无条件稳定。该放大器芯片覆盖了射电天文S,C,X,Ku 4个传统观测波段,适用于厘米波段超宽带接收前端和毫米波段超宽带中频放大模块。

     

    Abstract: Low-noise amplifier is an important component in radio astronomical front-end. It will affect the sensitivity of receiving system directly. In this paper, an ultra-wideband monolithic microwave integrated low noise amplifier based on 70nm GaAs mHEMT process from OMMIC has been designed. The 2-18GHz frequency coverage of MMIC LNA covers traditional four astronomical bands, such as S-, C-, X- and Ku-band. It is suitable for the application on the ultra-wideband receiver development for centimeter wave length, and ultra-broadband IF amplifier module for millimeter wave length astronomy. With the DC power dissipation of 150mW, the measured results show that the 3-stage MMIC LNA achieves the gain over 28dB, and the average noise temperature is about 93K.The chip size is 2mm × 1mm.

     

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