Design of 2-18GHz Ultra-Wideband Low Noise Amplifier

Wen Xiaomin; Li Bin

Astronomical Research and Technology > 2019 > 16(3): 278-284.

Wen Xiaomin, Li Bin. Design of 2-18GHz Ultra-Wideband Low Noise Amplifier[J]. Astronomical Research and Technology, 2019, 16(3): 278-284.

Citation:

Wen Xiaomin, Li Bin. Design of 2-18GHz Ultra-Wideband Low Noise Amplifier[J]. Astronomical Research and Technology, 2019, 16(3): 278-284.

Citation:

Wen Xiaomin, Li Bin. Design of 2-18GHz Ultra-Wideband Low Noise Amplifier[J]. Astronomical Research and Technology, 2019, 16(3): 278-284.

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Design of 2-18GHz Ultra-Wideband Low Noise Amplifier

Wen Xiaomin^1,2,
Li Bin¹

1. Shanghai Astronomical Observatory, Chinese Academy Sciences, Shanghai 200030, China;
2. University of Chinese Academy Sciences, Beijing 100049, China

More Information

Received Date: January 13, 2019
Revised Date: February 25, 2019
Available Online: November 20, 2023

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Abstract

Abstract

Low-noise amplifier is an important component in radio astronomical front-end. It will affect the sensitivity of receiving system directly. In this paper, an ultra-wideband monolithic microwave integrated low noise amplifier based on 70nm GaAs mHEMT process from OMMIC has been designed. The 2-18GHz frequency coverage of MMIC LNA covers traditional four astronomical bands, such as S-, C-, X- and Ku-band. It is suitable for the application on the ultra-wideband receiver development for centimeter wave length, and ultra-broadband IF amplifier module for millimeter wave length astronomy. With the DC power dissipation of 150mW, the measured results show that the 3-stage MMIC LNA achieves the gain over 28dB, and the average noise temperature is about 93K.The chip size is 2mm × 1mm.
- Low noise amplifier,
- GaAs mHEMT,
- Ultra-wideband,
- MMIC

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References (11)

References

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